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G2308E Datasheet N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: GTM

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Datasheet Details

Part number G2308E
Manufacturer GTM
File Size 327.28 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Download G2308E Download (PDF)

General Description

The G2308E utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The SOT-23 package is universally used for all commercial-industrial applications.

Overview

Pb Free Plating Product ISSUED DATE :2006/01/16 REVISED DATE : G2308E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 600m 1.

Key Features

  • Capable of 2.5V gate drive.
  • Lower on-resistance.
  • 2KV ESD Capability Package Dimensions TPU.34).

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