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G2308E - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The G2308E utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The SOT-23 package is universally used for all commercial-industrial applications.

Features

  • Capable of 2.5V gate drive.
  • Lower on-resistance.
  • 2KV ESD Capability Package Dimensions TPU.34).

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Datasheet preview – G2308E

Datasheet Details

Part number G2308E
Manufacturer GTM
File Size 327.28 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet G2308E Datasheet
Additional preview pages of the G2308E datasheet.

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Full PDF Text Transcription

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Pb Free Plating Product ISSUED DATE :2006/01/16 REVISED DATE : G2308E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 600m 1.2A Description The G2308E utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all commercial-industrial applications. Features *Capable of 2.5V gate drive *Lower on-resistance *2KV ESD Capability Package Dimensions TPU.34)QBDLBHF* Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@4.5V Continuous Drain Current3, VGS@4.
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