GE13003 Datasheet | GTM

Description NPN SILICON POWER TRANSISTOR The GE13003 is designed for high voltage, high speed power switching inductive circuit where fall time is critical. It is particularly suited for 115 and 220v Switch-mode. Features Inductive Switching Matrix 0.5~1.5Amp, 25 and 100 700V Blocking Capability SOA and Switching Application Information tc @ 1A, 100 is 290ns(Typ) Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Emitter Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current -Continuous -Peak(1) Base Current -Continuous -Peak(1) Emitter Current -Continuous -Peak(1) Total Power Dissipation at Ta=25 Derate above 25 Total Power Dissipation at Tc=25 Derate above 25 Symbol Tj Tstg VCEO(sus) VCEO VEBO ICM IB IBM IE IEM PD PD IC Ratings +150 -55 ~ +150 400 700 9 1.5 3.0 0.75 1.5 2.25 4.5 1.4 11.2 40 320 V V V A A A W m W/ W m W/ Unit Thermal Characteristics Parameter Thermal Resistance, Junction-ambient Thermal Resistance, Junction-case Maximum Lead Temperature for Soldering Purposes:1/8” from Case for 5 Seconds (1)Pulse Test: Pulse Width=5ms, Duty Cycle 10% Symbol R R JA JC Value 89 3.12 275 Unit /W /W 1/4 ISSUED DATE :2005/01/12 REVISED DATE : Electrical Characteristics(Tc = 25 Parameter - Off Characteristics(1) Collector-Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current - On Characteristics(1) VCE(sat)1 Collector-Emitter Saturation Voltage VCE(sat)2 VCE(sat)3 VCE(sat)4 VBE(sat)1 Base-Emitter Saturation Voltage VBE(sat)2 VBE(sat)3 DC Current Gain Current-Gain Bandwidth Product Output Capacitance - Switching Characteristics Delay Time Rise Time Storage Time Fall Time Storage Time Crossover Time Fall Time Td Tr Ts...