GE15P10
GE15P10 is P-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by GTM.
Description
The GE15P10 (TO-220 package through-hole version) is available for low-profile applications and suited for low voltage applications such as high efficiency switching DC/DC converters and DC motor control.
Features
- Simple Drive Requirement
- Lower On-resistance
- Fast Switching Characteristic
- Ro HS pliant
Package Dimensions
REF.
A b c D E L4 L5
Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60
REF. c1 b1 L e L1 Ø A1
Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25
2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current1 Total Power Dissipation
VGS ID @TC=25к ID @TC=100к
IDM PD @TC=25к
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings -100 ±20 -16 -9.8 -64 96 0.77
-55 ~ +150
Unit V V A A A W
W/к к
Thermal Data
Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient
Max. Max.
Symbol Rthj-c Rthj-a
Value 1.3 62
Unit к/W к/W
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ISSUED DATE :2006/01/19 REVISED DATE :
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test...