• Part: GE15P10
  • Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: GTM
  • Size: 241.86 KB
Download GE15P10 Datasheet PDF
GTM
GE15P10
GE15P10 is P-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by GTM.
Description The GE15P10 (TO-220 package through-hole version) is available for low-profile applications and suited for low voltage applications such as high efficiency switching DC/DC converters and DC motor control. Features - Simple Drive Requirement - Lower On-resistance - Fast Switching Characteristic - Ro HS pliant Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current1 Total Power Dissipation VGS ID @TC=25к ID @TC=100к IDM PD @TC=25к Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg Ratings -100 ±20 -16 -9.8 -64 96 0.77 -55 ~ +150 Unit V V A A A W W/к к Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 1.3 62 Unit к/W к/W Page: 1/4 ISSUED DATE :2006/01/19 REVISED DATE : Electrical Characteristics (Tj = 25к unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test...