• Part: GI494
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Manufacturer: GTM
  • Size: 282.57 KB
Download GI494 Datasheet PDF
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Datasheet Summary

.. Pb Free Plating Product ISSUED DATE :2006/12/07 REVISED DATE : N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 11m 55A Description The GI494 uses advanced trench technology to provide excellent on-resistance and low gate charge. The through-hole version (TO-251) is available for low-profile applications and suited for use as a high side switch in SMPS and general purpose applications. - Simple Drive Requirement - Lower On-resistance - Fast Switching Characteristic Features Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70...