GJ80LS02
GJ80LS02 is N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by GTM.
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Pb Free Plating Product
ISSUED DATE :2006/02/15 REVISED DATE :
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
25V 8m 75A
Description
The GJ80LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance. The TO-252 package is universally preferred for all mercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Features
- Low On-resistance
- Simple Drive Requirement
- Fast Switching Speed
Package Dimensions TO-252
REF. A B C D E F S
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90
REF. G H J K L M R
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80...
