GPI65007DF88
Overview
- 9 VDS=VGS, ID=5mA (TJ=150 oC) 2 BVDSS Drain-Source breakdown voltage VGS=0V, ID < 20 µA (TJ=25 OC) 3 IDSS Zero gate voltage drain leakage VGS=0V, VDS= 650V current TJ = 25 ℃ 4 IGSS Gate-Source Leakage VGS = 6V, VDS = 0V VGS=6V, ID=1.4A TJ = 25 ℃ 5 RDSON drain-source on resistance VGS=6V, ID=1.4A TJ = 150 ℃ 6 VSD Reverse conduc on voltage ISD=0.2A, VGS=0V
- 2 7 RG Gate resistance f=25Mhz Open drain
- 2 1.15 700 0.01 19 170 420 2.2 1.1
- 9 V V V 12 µA 700 µA 225 mΩ mΩ 3 V Ω Dynamic Parameters Test data Parameters Condi ons 1 CISS Input capacitance VGS= 0 V 2 COSS Output capacitance VDS = 500 V 3 CRSS Reverse transfer capacitance f = 100 kHz 4 CO(ER) Effec ve output capacitance, energy related VDS = 0 - 50
