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GD25MPS17H - Silicon Carbide Schottky Diode

Features

  • Gen4 Thin Chip Technology for Low VF.
  • Enhanced Surge and Avalanche Robustness.
  • Superior Figure of Merit QC/IF.
  • Low Thermal Resistance.
  • Low Reverse Leakage Current.
  • Temperature Independent Fast Switching.
  • Positive Temperature Coefficient of VF.
  • Low VF for High Temperature Operation Package TO-247-2 TM VRRM = IF (TC = 156°C) = QC = 1700 V 25 A 206 nC Case RoHS K A REACH Advantages.
  • Improved System Effic.

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Datasheet preview – GD25MPS17H

Datasheet Details

Part number GD25MPS17H
Manufacturer GeneSiC
File Size 518.50 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet GD25MPS17H Datasheet
Additional preview pages of the GD25MPS17H datasheet.

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Full PDF Text Transcription

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GD25MPS17H 1700V 25A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen4 Thin Chip Technology for Low VF • Enhanced Surge and Avalanche Robustness • Superior Figure of Merit QC/IF • Low Thermal Resistance • Low Reverse Leakage Current • Temperature Independent Fast Switching • Positive Temperature Coefficient of VF • Low VF for High Temperature Operation Package TO-247-2 TM VRRM = IF (TC = 156°C) = QC = 1700 V 25 A 206 nC Case RoHS K A REACH Advantages • Improved System Efficiency • High System Reliability • Optimal Price Performance • Reduced Cooling Requirements • Increased System Power Density • Zero Reverse Recovery Current • Easy to Parallel without Thermal Runaway • Improved System Efficiency Applications • EV Fast Chargers • Solar Inverters • Wind
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