GD2X100MPS12N Overview
GD2X100MPS12N 1200V 200A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode.
GD2X100MPS12N Key Features
- Gen4 Thin Chip Technology for Low VF
- Superior Figure of Merit QC/IF
- 100% Avalanche Tested
- Enhanced Surge Current Robustness
- Temperature Independent Fast Switching
- Low Thermal Resistance
- Positive Temperature Coefficient of VF
- High dV/dt Ruggedness
- 644 nC
- Improved System Efficiency