GD2X100MPS06N Description
GD2X100MPS06N 650V 200A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode.
GD2X100MPS06N Key Features
- Gen4 Thin Chip Technology for Low VF
- Superior Figure of Merit QC/IF
- 100% Avalanche Tested
- Enhanced Surge Current Robustness
- Temperature Independent Fast Switching
- Low Thermal Resistance
- Positive Temperature Coefficient of VF
- High dV/dt Ruggedness
- 308 nC
- Optimal Price Performance