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GD2X100MPS06N Datasheet Silicon Carbide Schottky Diode

Manufacturer: GeneSiC

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Datasheet Details

Part number GD2X100MPS06N
Manufacturer GeneSiC
File Size 627.83 KB
Description Silicon Carbide Schottky Diode
Download GD2X100MPS06N Download (PDF)

Overview

GD2X100MPS06N 650V 200A SiC Schottky MPS™ Diode Silicon Carbide Schottky.

Key Features

  • Gen4 Thin Chip Technology for Low VF.
  • Superior Figure of Merit QC/IF.
  • 100% Avalanche Tested.
  • Enhanced Surge Current Robustness.
  • Temperature Independent Fast Switching.
  • Low Thermal Resistance.
  • Positive Temperature Coefficient of VF.
  • High dV/dt Ruggedness Package SOT-227 TM VRRM = IF (TC = 86°C) = QC = 650 V 200 A.
  • 308 nC.
  • A A RoHS K K REACH Advantages.
  • Optimal Price Performance.
  • Imp.

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