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GD2X25MPS17N - Silicon Carbide Schottky Diode

Datasheet Summary

Features

  • Gen4 Thin Chip Technology for Low VF.
  • Enhanced Surge and Avalanche Robustness.
  • Superior Figure of Merit QC/IF.
  • Low Thermal Resistance.
  • Low Reverse Leakage Current.
  • Temperature Independent Fast Switching.
  • Positive Temperature Coefficient of VF.
  • Low VF for High Temperature Operation Package SOT-227 TM VRRM = IF (TC = 145°C) = QC = 1700 V 50 A.
  • 412 nC.
  • A A RoHS K K REACH Advantages.
  • Improved S.

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Datasheet Details

Part number GD2X25MPS17N
Manufacturer GeneSiC
File Size 765.32 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet GD2X25MPS17N Datasheet
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GD2X25MPS17N 1700V 50A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen4 Thin Chip Technology for Low VF • Enhanced Surge and Avalanche Robustness • Superior Figure of Merit QC/IF • Low Thermal Resistance • Low Reverse Leakage Current • Temperature Independent Fast Switching • Positive Temperature Coefficient of VF • Low VF for High Temperature Operation Package SOT-227 TM VRRM = IF (TC = 145°C) = QC = 1700 V 50 A * 412 nC * A A RoHS K K REACH Advantages • Improved System Efficiency • High System Reliability • Optimal Price Performance • Reduced Cooling Requirements • Increased System Power Density • Zero Reverse Recovery Current • Easy to Parallel without Thermal Runaway • Improved System Efficiency Applications • EV Fast Chargers • Solar Inverters •
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