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GD2X10MPS12D - Silicon Carbide Schottky Diode

Datasheet Summary

Features

  • Gen4 Thin Chip Technology for Low VF.
  • Enhanced Surge and Avalanche Robustness.
  • Superior Figure of Merit QC/IF.
  • Low Thermal Resistance.
  • Low Reverse Leakage Current.
  • Temperature Independent Fast Switching.
  • Positive Temperature Coefficient of VF.
  • High dV/dt Ruggedness Package TO-247-3 TM VRRM = IF (TC = 159°C) = QC = 1200 V 20 A.
  • 64 nC.
  • Case RoHS AKA REACH Advantages.
  • Improved System Efficiency.

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Datasheet Details

Part number GD2X10MPS12D
Manufacturer GeneSiC
File Size 503.55 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet GD2X10MPS12D Datasheet
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GD2X10MPS12D 1200V 20A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen4 Thin Chip Technology for Low VF • Enhanced Surge and Avalanche Robustness • Superior Figure of Merit QC/IF • Low Thermal Resistance • Low Reverse Leakage Current • Temperature Independent Fast Switching • Positive Temperature Coefficient of VF • High dV/dt Ruggedness Package TO-247-3 TM VRRM = IF (TC = 159°C) = QC = 1200 V 20 A * 64 nC * Case RoHS AKA REACH Advantages • Improved System Efficiency • High System Reliability • Optimal Price Performance • Reduced Cooling Requirements • Increased System Power Density • Zero Reverse Recovery Current • Easy to Parallel without Thermal Runaway • Enables Extremely Fast Switching Applications • Power Factor Correction (PFC) • Solar Inverters
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