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GD30MPS06H 650V 30A SiC Schottky MPS™ Diode
Silicon Carbide Schottky Diode
Features
• Gen4 Thin Chip Technology for Low VF • Superior Power Efficiency • Superior Figure of Merit QC/IF • Enhanced Surge Current Robustness • Low Thermal Resistance • Temperature Independent Fast Switching • Positive Temperature Coefficient of VF • High dV/dt Ruggedness
Advantages
• Optimal Price Performance • Improved System Efficiency • Reduced Cooling Requirements • Increased System Power Density • Zero Reverse Recovery Current • High System Reliability • Easy to Parallel without Thermal Runaway • Enables Extremely Fast Switching
Package
TM
VRRM
=
IF (TC = 141°C) =
QC
=
650 V 30 A 46 nC
Case
RoHS
TO-247-2
K
A
REACH
Applications
• Power Factor Correction (PFC) • Electric Vehicles and Battery Ch
GD30MPS06H Datasheet
