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GD30MPS12H - Silicon Carbide Schottky Diode

Datasheet Summary

Features

  • Gen4 Thin Chip Technology for Low VF.
  • Superior Figure of Merit QC.
  • VF.
  • 100% Avalanche (UIL) Tested.
  • Enhanced Surge Current Withstand Capability.
  • Temperature Independent Fast Switching.
  • Low Thermal Resistance.
  • Positive Temperature Coefficient of VF.
  • High dV/dt Ruggedness Package TO-247-2 TM VRRM = IF (TC = 148°C) = QC = 1200 V 30 A 97 nC Case RoHS K A REACH Advantages.
  • Improved System Efficiency.

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Datasheet Details

Part number GD30MPS12H
Manufacturer GeneSiC
File Size 541.61 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet GD30MPS12H Datasheet
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GD30MPS12H 1200V 30A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen4 Thin Chip Technology for Low VF • Superior Figure of Merit QC*VF • 100% Avalanche (UIL) Tested • Enhanced Surge Current Withstand Capability • Temperature Independent Fast Switching • Low Thermal Resistance • Positive Temperature Coefficient of VF • High dV/dt Ruggedness Package TO-247-2 TM VRRM = IF (TC = 148°C) = QC = 1200 V 30 A 97 nC Case RoHS K A REACH Advantages • Improved System Efficiency • High System Reliability • Optimal Price Performance • Reduced Cooling Requirements • Increased System Power Density • Zero Reverse Recovery Current • Easy to Parallel without Thermal Runaway • Enables Extremely Fast Switching Applications • Power Factor Correction (PFC) • Electric Vehicles
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