GD30MPS12J - Silicon Carbide Schottky Diode

Product Overview

GeneSiC

Part number	GD30MPS12J
Manufacturer	GeneSiC
File Size	613.67 KB
Description	Silicon Carbide Schottky Diode
Datasheet	GD30MPS12J Datasheet
Additional preview pages of the GD30MPS12J datasheet.

Gen4 Thin Chip Technology for Low VF.
Superior Figure of Merit QC.
VF.
100% Avalanche (UIL) Tested.
Enhanced Surge Current Withstand Capability.
Temperature Independent Fast Switching.
Low Thermal Resistance.
Positive Temperature Coefficient of VF.
High dV/dt Ruggedness Package TO-263-7 TM VRRM = IF (TC = 150°C) = QC = 1200 V 30 A 97 nC Case RoHS K A REACH Advantages.
Improved System Efficiency.

📁 Similar Datasheet

Other Datasheets by GeneSiC

Published: Dec 20, 2024 |