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GD30MPS12J 1200V 30A SiC Schottky MPS™ Diode
Silicon Carbide Schottky Diode
Features
• Gen4 Thin Chip Technology for Low VF • Superior Figure of Merit QC*VF • 100% Avalanche (UIL) Tested • Enhanced Surge Current Withstand Capability • Temperature Independent Fast Switching • Low Thermal Resistance • Positive Temperature Coefficient of VF • High dV/dt Ruggedness
Package TO-263-7
TM
VRRM
=
IF (TC = 150°C) =
QC
=
1200 V 30 A 97 nC
Case
RoHS
K
A
REACH
Advantages
• Improved System Efficiency • High System Reliability • Optimal Price Performance • Reduced Cooling Requirements • Increased System Power Density • Zero Reverse Recovery Current • Easy to Parallel without Thermal Runaway • Enables Extremely Fast Switching
Applications
• Power Factor Correction (PFC) • Electric Vehicles
GD30MPS12J Datasheet
