GD30MPS06J Description
GD30MPS06J 650V 30A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode.
GD30MPS06J Key Features
- Gen4 Thin Chip Technology for Low VF
- Superior Power Efficiency
- Superior Figure of Merit QC/IF
- Enhanced Surge Current Robustness
- Low Thermal Resistance
- Temperature Independent Fast Switching
- Positive Temperature Coefficient of VF
- High dV/dt Ruggedness
- Optimal Price Performance
- Improved System Efficiency