General Semiconductor BS828
DMOS Transistors
| Part No. | BS828 |
|---|---|
| Datasheet | BS828 Download |
| Manufacturer |  General Semiconductor |
| Description | DMOS Transistors |
| Buy | Stock & Price |
FEATURES
♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ .045 (1.15) .037 (0.95) Top View .056 (1.43) .052 (1.33) 1 2 max. .004 (0.1) High breakdown voltage High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown Specially suited for telephone subsets .007 (0.175) .005 (0.125) .037(0.95) .037(0.95)MECHANICAL DATA
Case: SOT-23 Plastic Package Weight: approx. 0.008 g Marking S28 .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) Dimensions in inches and (millimeters) Pin configuration 1 = Gate, 2 = Source, 3 = DrainMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified Symbol Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage (pulsed) Drain Current (continuous) Power Dissipation at TSB = 50 °C Junction Temperature Storage Temperature Range 1) Value 240 240 ± 20 230 0.3101) 150 –65 to +150 Unit V V V mA W °C °C VDSS VDGS VGS ID Ptot Tj TS Device on fiberglass substrate, see layout Inverse Diode Symbol Max.
