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BS829 - DMOS Transistors

Key Features

  • .045 (1.15) .037 (0.95) Top View .056 (1.43) .052 (1.33) 1 2 max. .004 (0.1) High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown .007 (0.175) .005 (0.125) .037(0.95) .037(0.95).

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BS829 DMOS Transistors (P-Channel) SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ .045 (1.15) .037 (0.95) Top View .056 (1.43) .052 (1.33) 1 2 max. .004 (0.1) High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx. 0.008 g Marking S29 .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.