Datasheet Summary
DMOS Transistors (N-Channel)
TO-92
.181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6)
Features
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High breakdown voltage High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time CMOS logic patible input No thermal runaway No secondary breakdown Specially suited for telephone subsets max. ∅ .022 (0.55) .098 (2.5) D G S
MECHANICAL DATA
Case: TO-92 Plastic Package Weight: approx. 0.18 g
On special request, this transistor is also manufactured in the pin configuration TO-18.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient...
