GSM7002T Datasheet PDF

Globaltech GSM7002T

The GSM7002T is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 640mA DC and can deliver pulsed currents up to 950mA.

Part No.	GSM7002T
Datasheet	GSM7002T Download
Manufacturer	Globaltech
Description	Dual N-Channel MOSFET
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DESCRIPTION

These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

FEATURES

60V/0.50A,RDS(ON)=2.0Ω@VGS=10V 60V/0.20A,RDS(ON)=4.0Ω@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-363 package design

APPLICATIONS

Drivers: Relays, Solenoids, Lamps, Hammers, Display , Memories, Transistors, etc. High saturation current capability. Direct Logic-Level Inter