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GSM7002T - Dual N-Channel MOSFET

General Description

The GSM7002T is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology.

These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

Key Features

  • 60V/0.50A,RDS(ON)=2.0Ω@VGS=10V.
  • 60V/0.20A,RDS(ON)=4.0Ω@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-363 package design.

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Datasheet Details

Part number GSM7002T
Manufacturer Globaltech
File Size 318.19 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet GSM7002T Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Dual N-Channel Enhancement Mode MOSFET Product Description The GSM7002T is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 640mA DC and can deliver pulsed currents up to 950mA. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features „ 60V/0.50A,RDS(ON)=2.0Ω@VGS=10V „ 60V/0.20A,RDS(ON)=4.0Ω@VGS=4.