GSM7002T Datasheet | Globaltech

Dual N-Channel Enhancement Mode MOSFET Product Description The GSM7002T is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 640m A DC and can deliver pulsed currents up to 950m A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features - 60V/0.50A,RDS(ON)=2.0Ω@VGS=10V - 60V/0.20A,RDS(ON)=4.0Ω@VGS=4.5V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - SOT-363 package design Applications - Drivers: Relays, Solenoids, Lamps, Hammers, Display , Memories, Transistors, etc. - High saturation current capability. Direct Logic-Level...