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GSM7002T Datasheet Dual N-channel MOSFET

Manufacturer: Globaltech

Overview: Dual N-Channel Enhancement Mode MOSFET Product.

Datasheet Details

Part number GSM7002T
Manufacturer Globaltech
File Size 318.19 KB
Description Dual N-Channel MOSFET
Datasheet GSM7002T-Globaltech.pdf

General Description

The GSM7002T is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology.

These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

They can be used in most applications requiring up to 640mA DC and can deliver pulsed currents up to 950mA.

Key Features

  • 60V/0.50A,RDS(ON)=2.0Ω@VGS=10V.
  • 60V/0.20A,RDS(ON)=4.0Ω@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-363 package design.

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GSM7002T Distributor