DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. FEATURES
100V, 2A, RDS(ON)=200mΩ@VGS=10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available SOT-23 package design APPLICATIONS
Notebook Load Switch LED applications Packages & Pin Assignments GSM0910PJZF (SOT-23) Top Views Pin DESCRIPTION
1 Gate 2 Source 3 Drain Ordering Information GSM0910P 1 Marking Information Part Number GSM0910PJZF Package SOT-23 Part Marking dYWMM Quantity 3000pcs ABSOLUTE MAXIMUM RATINGS
TA=25ºC Unless otherwise noted Symbol Parameter VDS Drain-Sourc
Globaltech
