GSM0910P - N-Channel MOSFET

Product Overview

Globaltech

Datasheet Details

Part number	GSM0910P
Manufacturer	Globaltech
File Size	574.71 KB
Description	N-Channel MOSFET
Datasheet	GSM0910P Datasheet
Additional preview pages of the GSM0910P datasheet.

GSM0910P Product details

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

100V, 2A, RDS(ON)=200mΩ@VGS=10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.
SOT-23 package design.

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Published: Sep 9, 2018 |