Datasheet Summary
100V N-Channel MOSFETs
Product Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
These devices are well suited for high efficiency fast switching applications.
Features
- 100V, 2A, RDS(ON)=200mΩ@VGS=10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available
- SOT-23 package design
Applications
- Notebook
- Load Switch
- LED applications
Packages & Pin Assignments
GSM0910PJZF (SOT-23)
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