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GSM0910P - N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • 100V, 2A, RDS(ON)=200mΩ@VGS=10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.
  • SOT-23 package design.

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Datasheet Details

Part number GSM0910P
Manufacturer Globaltech
File Size 574.71 KB
Description N-Channel MOSFET
Datasheet download datasheet GSM0910P Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GSM0910P 100V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ 100V, 2A, RDS(ON)=200mΩ@VGS=10V „ Improved dv/dt capability „ Fast switching „ 100% EAS Guaranteed „ Green Device Available „ SOT-23 package design Applications „ Notebook „ Load Switch „ LED applications Packages & Pin Assignments GSM0910PJZF (SOT-23) Top Views Pin Description 1 Gate 2 Source 3 Drain Ordering Information GSM0910P www.gs-power.