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GSM02N15 - N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • 150V,1.4A, RDS(ON) =480mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • TSOP-6 package design.

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Datasheet Details

Part number GSM02N15
Manufacturer Globaltech
File Size 466.34 KB
Description N-Channel MOSFET
Datasheet download datasheet GSM02N15 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GSM02N15 150V N Channel MOSFET Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features  150V,1.4A, RDS(ON) =480mΩ@VGS = 10V  Improved dv/dt capability  TSOP-6 package design Applications  Portable Equipment  Battery Powered System  Load Switch Packages & Pin Assignments GSM02N15TSF (TSOP-6) Pin Symbo l 1D 2D 3G 4S 5D 6D Description Drain Drain Gate Source Drain Drain GSM02N15 www.gs-power.