Datasheet Summary
150V P-Channel Enhancement MOSFETs
General Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
Features
- -150V/-1A,RDS(ON)=750mΩ@VGS=-1V
- Improved dv/dt capability
- Fast switching
- Green Device Available
Applications
- Networking
- Load Switch
- LED applications
Packages & Pin Assignments
GSM02P15TSF (TSOP-6)
Pin Description 1 Drain 2 Drain 3...