Globaltech GSM02P15
This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.GENERAL DESCRIPTION
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.FEATURES
● -150V/-1A,RDS(ON)=750mΩ@VGS=-1V● Improved dv/dt capability
● Fast switching
● Green Device Available
APPLICATIONS
● Networking● Load Switch
● LED applications Packages & Pin Assignments GSM02P15TSF (TSOP-6) Pin
DESCRIPTION
1 Drain 2 Drain 3 Gate 4 Source 5 Drain 6 Drain TSOP-6 P-Channel Version_1.0 Notice Ordering Information Part Number GSM02P15TSF Marking Information Package TSOP-6 Quantity Reel 3000 PCSABSOLUTE MAXIMUM RATINGS
(TA=25ºC unless otherwise noted) Symbol VDS VGS ID IDM PD TJ TSTG Parameter Drain-So