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GSM02P15 - P-Channel MOSFET

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • -150V/-1A,RDS(ON)=750mΩ@VGS=-1V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.

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Datasheet Details

Part number GSM02P15
Manufacturer Globaltech
File Size 333.30 KB
Description P-Channel MOSFET
Datasheet download datasheet GSM02P15 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GSM02P15 150V P-Channel Enhancement MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features  -150V/-1A,RDS(ON)=750mΩ@VGS=-1V  Improved dv/dt capability  Fast switching  Green Device Available Applications  Networking  Load Switch  LED applications Packages & Pin Assignments GSM02P15TSF (TSOP-6) Pin Description 1 Drain 2 Drain 3 Gate 4 Source 5 Drain 6 Drain TSOP-6 P-Channel Version_1.