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GSMBSS139 - N-Channel MOSFET

General Description

These N-Channel Enhancement Mode Power Field Effect Transistors are Using Trench DMOS Technology.

This Advanced Technology has been Especially Tailored to Minimize on-state Resistance, Provide Superior Switching Performance, and Withstand high Energy Pulse in the Avalanche and Commutation mode.

Key Features

  • 50V, 0.2A, RDS(ON)=3.5Ω@VGS=5V.
  • Improved dv/dt Capability.
  • Fast Switching.
  • Low Threshold Voltage(VGS(th)：0.5…1.5V) Makes It Ideal for Low Voltage.

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Datasheet Details

Part number GSMBSS139
Manufacturer Globaltech
File Size 1.68 MB
Description N-Channel MOSFET
Datasheet download datasheet GSMBSS139 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GSMBSS139 50V N-Channel MOSFETs Product Description These N-Channel Enhancement Mode Power Field Effect Transistors are Using Trench DMOS Technology. This Advanced Technology has been Especially Tailored to Minimize on-state Resistance, Provide Superior Switching Performance, and Withstand high Energy Pulse in the Avalanche and Commutation mode. These Devices are well Suited for High Efficiency Fast Switching Applications. Packages & Pin Assignments GSMBSS139JZF (SOT-23) Features  50V, 0.2A, RDS(ON)=3.5Ω@VGS=5V  Improved dv/dt Capability  Fast Switching  Low Threshold Voltage(VGS(th)：0.5…1.