GSMBSS139 Datasheet | Globaltech

50V N-Channel MOSFETs Product Description These N-Channel Enhancement Mode Power Field Effect Transistors are Using Trench DMOS Technology. This Advanced Technology has been Especially Tailored to Minimize on-state Resistance, Provide Superior Switching Performance, and Withstand high Energy Pulse in the Avalanche and mutation mode. These Devices are well Suited for High Efficiency Fast Switching Applications. Packages & Pin Assignments GSMBSS139JZF (SOT-23) Features - 50V, 0.2A, RDS(ON)=3.5Ω@VGS=5V - Improved dv/dt Capability - Fast Switching - Low Threshold Voltage(VGS(th)：0.5…1.5V) Makes It Ideal for Low Voltage Application - 100% EAS Guaranteed - Green Device Available -...