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These N-Channel Enhancement Mode Power
Field Effect Transistors are Using Trench DMOS
Technology. This Advanced Technology has been
Especially Tailored to Minimize on-state
Resistance, Provide Superior Switching
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Performance, and Withstand high Energy Pulse in
the Avalanche and Commutation mode.
These Devices are well Suited for High Efficiency Fast Switching Applications.
GSMBSS139W Datasheet
