GSMBSS139Y Overview
Description
1 Source 1 2 Gate 1 3 Drain 2 4 Source 2 5 Gate 2 6 Drain 1.
Key Features
- 60V, 0.2A, RDS(ON)=2.5Ω@VGS=4.5V
- Improved dv/dt Capability
- Fast Switching
- Green Device Available
- SOT-563 Package Design
- ESD Protected : 1500V
| Part | GSMBSS139Y |
|---|---|
| Description | Dual N-Channel Enhancement MOSFET |
| Category | MOSFET |
| Manufacturer | Globaltech |
| Size | 1.76 MB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |