GSMBSS139Y
GSMBSS139Y is Dual N-Channel Enhancement MOSFET manufactured by Globaltech.
Dual N-Channel Enhancement MOSFET
Product Description
These Dual N-Channel Enhancement Mode Power Field Effect Transistors are Using Trench DMOS Technology. This Advanced Technology has been Especially Tailored to Minimize on-state Resistance, Provide Superior Switching Performance, and Withstand high Energy Pulse in the Avalanche and mutation mode.
These Devices are well Suited for High Efficiency Fast Switching Applications.
Features
- 60V, 0.2A, RDS(ON)=2.5Ω@VGS=4.5V
- Improved dv/dt Capability
- Fast Switching
- Green Device Available
- SOT-563 Package Design
- ESD Protected : 1500V
Applications
- Notebook
- Load Switch
- LED Applications
Packages & Pin Assignments
GSMBS...
