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GSMDC3960X - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 30V, 115A, RDS(ON)=2.4mΩ@VGS=10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS guaranteed.
  • Green Device Available.
  • DFN5X6-8L package design.

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Datasheet Details

Part number GSMDC3960X
Manufacturer Globaltech
File Size 507.20 KB
Description N-Channel MOSFET
Datasheet download datasheet GSMDC3960X Datasheet

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Full PDF Text Transcription

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GSMDC3960X 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ 30V, 115A, RDS(ON)=2.
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