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GSMDD6911
60V P-Channel MOSFETs
Product Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
Features
-60V, -7A, RDS(ON)=180mΩ@VGS=-10V Improved dv/dt capability Fast switching 100% EAS guaranteed Green Device Available TO-252-2L package design
Applications
Motor Drive Power Tools LED Lighting
Packages & Pin Assignments
GSMDD6911DF (TO-252-2L)
Top View
Description Gate
Source Drain
GSMDD6911
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GSMDD6911 Datasheet
