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GSMDD6911 Datasheet PDF

Globaltech GSMDD6911

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
Part No. GSMDD6911
Datasheet GSMDD6911 Download
Manufacturer
Globaltech
Description P-Channel MOSFET
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GSMDD6911 datasheet page 1 preview

DESCRIPTION

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

FEATURES

„ -60V, -7A, RDS(ON)=180mΩ@VGS=-10V „ Improved dv/dt capability „ Fast switching „ 100% EAS guaranteed „ Green Device Available „ TO-252-2L package design

APPLICATIONS

„ Motor Drive „ Power Tools „ LED Lighting Packages & Pin Assignments GSMDD6911DF (TO-252-2L) Top View

DESCRIPTION

Gate Source Drain GSMDD6911 1 Ordering Information GS P/N GSMDD6911 D F Package Code Pb Free Code Part Number GSMDD6911DF Package TO-252-2L Marking Information Quantity Reel 2500 PCS

ABSOLUTE MAXIMUM RATINGS

TA=25ºC Unless otherwise noted
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