GSMDD6911 Datasheet | Globaltech

60V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. Features - -60V, -7A, RDS(ON)=180mΩ@VGS=-10V - Improved dv/dt capability - Fast switching - 100% EAS guaranteed - Green Device Available - TO-252-2L package design Applications - Motor Drive - Power Tools - LED Lighting Packages & Pin Assignments GSMDD6911DF (TO-252-2L) Top View Description Gate Source Drain .gs-power. 1 Ordering Information GS P/N GSMDD6911 D F Package Code Pb Free Code Part Number GSMDD6911DF Package TO-252-2L Marking Information Quantity...