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GSMDD6966A - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 60V, 55A, RDS(ON)=8.2mΩ@VGS=10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.
  • TO-252-2L package design.

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Datasheet Details

Part number GSMDD6966A
Manufacturer Globaltech
File Size 488.19 KB
Description N-Channel MOSFET
Datasheet download datasheet GSMDD6966A Datasheet

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Full PDF Text Transcription

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GSMDD6966A 60V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ 60V, 55A, RDS(ON)=8.2mΩ@VGS=10V „ Improved dv/dt capability „ Fast switching „ Green Device Available „ TO-252-2L package design Applications „ Networking „ Load Switch „ LED Applications Packages & Pin Assignments GSMDD6966ADF (TO-252-2L) Top View Description Gate Source Drain GSMDD6966A www.gs-power.
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