GSMDD6912 Datasheet | Globaltech

60V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. Features - 60V, 11A, RDS(ON)=90mΩ@VGS=10V - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed - Green Device Available - TO-252-2L package design Applications - Motor Drive - Power Tools - LED Lighting Packages & Pin Assignments GSMDD6912DF (TO-252-2L) Top View Description Gate Source Drain .gs-power. 1 Ordering Information GS P/N GSMDD6912 D F Package Code Pb Free Code Part Number GSMDD6912DF Package TO-252-2L Marking...