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GSMDD6912
60V N-Channel MOSFETs
Product Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
Features
60V, 11A, RDS(ON)=90mΩ@VGS=10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available TO-252-2L package design
Applications
Motor Drive Power Tools LED Lighting
Packages & Pin Assignments
GSMDD6912DF (TO-252-2L)
Top View
Description Gate
Source Drain
GSMDD6912
www.gs-power.
GSMDD6912 Datasheet
