Datasheet Details
| Part number | GSMDS2305 |
|---|---|
| Manufacturer | Globaltech |
| File Size | 554.25 KB |
| Description | P-Channel MOSFET |
| Download | GSMDS2305 Download (PDF) |
|
|
| Part number | GSMDS2305 |
|---|---|
| Manufacturer | Globaltech |
| File Size | 554.25 KB |
| Description | P-Channel MOSFET |
| Download | GSMDS2305 Download (PDF) |
|
|
|
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
GSMDS2305 20V P-Channel MOSFETs Product.
| Part Number | Description |
|---|---|
| GSMDS2603 | P-Channel MOSFET |
| GSMDS04N15 | N-Channel MOSFET |
| GSMDS0956 | N-Channel MOSFET |
| GSMDS0966 | N-Channel MOSFET |
| GSMDS3710 | N+P Dual-Channel MOSFET |
| GSMDS3807 | Dual P-Channel MOSFET |
| GSMDS3810 | Dual N-Channel MOSFET |
| GSMDS3903 | P-Channel MOSFET |
| GSMDS3904 | N-Channel MOSFET |
| GSMDS3906 | N-Channel MOSFET |