DESCRIPTION
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. FEATURES
-20V, -11A, RDS(ON)=16mΩ@VGS=-4.5V Improved dv/dt capability Fast switching Suit for -1.8V Gate Drive APPLICATIONS
Green Device Available SOP-8 package design APPLICATIONS
Notebook Load Switch Networking Packages & Pin Assignments GSMDS2305SF (SOP-8) GSMDS2305 Pin DESCRIPTION
Pin 1 Source 5 2 Source 6 3 Source 7 4 Gate 8 DESCRIPTION
Drain Drain Drain Drain 1 Ordering Information Part Number GSMDS2305SF Marking Information Package SOP-8 Quantity Reel 4000 PCS ABSOLUTE MAXIMUM RATINGS
TA=25ºC Unless ot
Globaltech
