Good-Ark Semiconductor PZTA06
NPN Transistor
FEATURES
● Low voltage and high current● Linear amplifier and switch applications PZTA06 NPN Transistor B C E SOT-223 Schematic Diagram
ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO 80 Collector-Emitter Voltage VCEO 80 Emitter-Base Voltage VEBO 4 Collector Current IC 500 Collector Power Dissipation PC 1 Thermal Resistance From Junction to Ambient RθJA 125 Operation Junction and Storage Temperature Range TJ, Tstg -55 to +150 Unit V V V mA W ℃/W ℃ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage V(BR)CBO IC=0.1mA, IE=0 80 Collector-Emitter Breakdown Voltage1 V(BR)CEO IC=1mA, IB=0 80 Emitter-Base Breakdown Voltage V(BR)EBO IE=0.1mA, IC=0 4 Collector Cut-Off Current ICBO VCB=80V, IE=0 - Collector Cut-Off Current ICEO VCE=60V, IB=0 - Emitter Cut-Off Current IEBO VEB=3V, IC=0 - DC Current Gain hFE(1) VCE=1V, IC=10mA 100 hFE(2) VCE=1V, I...