NXP Semiconductors PZTA06
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.FEATURES
● High current (max. 500 mA)● Low voltage (max. 80 V).
APPLICATIONS
● Medium power switching in e.g. telephony and professional communication. handbook, halfpage PZTA06 PINNING PIN 1 2, 4 3 base collector emitterDESCRIPTION
4DESCRIPTION
NPN transistor in a SOT223 plastic package. PNP complement: PZTA56. 1 2, 4 3 1 Top view 2 3 MAM287 Fig.1 Simplified outline (SOT223) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = 100 mA; VCE = 1 V IC = 10 mA; VCE = 2 V; f = 100 MHz open emitter open base CONDITIONS − − − − 100 100 MIN. MAX. 80 80 500 1.2 − − MHz V V mA W UNIT 1997 Jul 14 2 Philips Semiconductors Product specification NPN general purpose transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note PARAMETER collect...