GPT11N65 datasheet by Greatpower.
| Part number | GPT11N65 |
|---|---|
| Datasheet | GPT11N65-Greatpower.pdf |
| File Size | 1.18 MB |
| Manufacturer | Greatpower |
| Description | POWER FIELD EFFECT TRANSISTOR |
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FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and mutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time.
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