Datasheet4U Logo Datasheet4U.com

GPT11N65D - POWER FIELD EFFECT TRANSISTOR

Download the GPT11N65D datasheet PDF (GPT11N65 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power field effect transistor.

Features

  • This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GPT11N65-Greatpower.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number GPT11N65D
Manufacturer Greatpower
File Size 1.18 MB
Description POWER FIELD EFFECT TRANSISTOR
Datasheet download datasheet GPT11N65D Datasheet

📁 Similar Datasheet

  • GPT1000A - General Touch Sensor Controller (Generalplus)
  • GPT1001A - General Touch Sensor Controller (Generalplus)
  • GPT8340A - 46 TOUCH IO (Generalplus)
  • GPT8P340A1 - 46 TOUCH IO (Generalplus)
  • GPTP1270 - PHASE CONTROLLED SCR (Green Power Solutions srl)
  • GPTP2157 - PHASE CONTROLLED SCR (Green Power Solutions srl)
  • GPTP2164 - PHASE CONTROLLED SCR (Green Power Solutions srl)
  • GPTP2165 - PHASE CONTROLLED SCR (Green Power Solutions srl)
  • GPTP2190 - PHASE CONTROLLED SCR (Green Power Solutions srl)
  • GPTP2199 - PHASE CONTROLLED SCR (Green Power Solutions srl)
Other Datasheets by Greatpower

Full PDF Text Transcription

Click to expand full text
GPT11N65 / GPT11N65D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
Published: |