Datasheet4U Logo Datasheet4U.com

GPT14N65 Datasheet Power Field Effect Transistor

Manufacturer: Greatpower

Overview: GPT14N65 / GPT14N65D POWER FIELD EFFECT TRANSISTOR GENERAL.

Datasheet Details

Part number GPT14N65
Manufacturer Greatpower
File Size 229.30 KB
Description POWER FIELD EFFECT TRANSISTOR
Datasheet GPT14N65-Greatpower.pdf

General Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

In addition, this advanced MOSFET is designed to withstand high energy in avalanche and mutation modes.

The new energy efficient design also offers a drain-to-source diode with a fast recovery time.

Key Features

  • Robust High Voltage Termination.
  • Avalanche Energy Specified.
  • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode.
  • Diode is Characterized for Use in Bridge Circuits.
  • IDSS and VDS(on) Specified at El.

GPT14N65 Distributor