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GPT14N65D Datasheet Power Field Effect Transistor

Manufacturer: Greatpower

Overview: GPT14N65 / GPT14N65D POWER FIELD EFFECT TRANSISTOR GENERAL.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

In addition, this advanced MOSFET is designed to withstand high energy in avalanche and mutation modes.

The new energy efficient design also offers a drain-to-source diode with a fast recovery time.

Key Features

  • Robust High Voltage Termination.
  • Avalanche Energy Specified.
  • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode.
  • Diode is Characterized for Use in Bridge Circuits.
  • IDSS and VDS(on) Specified at El.

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