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GPT14N65D - POWER FIELD EFFECT TRANSISTOR

Download the GPT14N65D datasheet PDF (GPT14N65 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power field effect transistor.

Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.

Features

  • Robust High Voltage Termination.
  • Avalanche Energy Specified.
  • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode.
  • Diode is Characterized for Use in Bridge Circuits.
  • IDSS and VDS(on) Specified at El.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GPT14N65-Greatpower.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number GPT14N65D
Manufacturer Greatpower
File Size 229.30 KB
Description POWER FIELD EFFECT TRANSISTOR
Datasheet download datasheet GPT14N65D Datasheet

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Full PDF Text Transcription

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GPT14N65 / GPT14N65D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
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