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HM01N100PR - Silicon N-Channel Po wer MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • z Fast Switching z Low ON Resistance(Rdson≤10.5Ω) z Low Gate Charge (Typical Data:6.0nC) z Low Reverse transfer capacitances(Typical:4pF) z 100% Single Pulse avalanche energy Test.

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Silicon N-Channel Po wer MOSFET HM01N100PR General Description： HM01N100PR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 1000 0.1 3 46 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOT-89-3L, which accords with the RoHS standard. Features： z Fast Switching z Low ON Resistance(Rdson≤10.5Ω) z Low Gate Charge (Typical Data:6.0nC) z Low Reverse transfer capacitances(Typical:4pF) z 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.