HM01N100PR - Silicon N-Channel Po wer MOSFET

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM01N100PR
Manufacturer	H&M Semiconductor
File Size	902.27 KB
Description	Silicon N-Channel Po wer MOSFET
Datasheet	HM01N100PR Datasheet
Additional preview pages of the HM01N100PR datasheet.

Product details

Description

HM01N100PR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 1000 0.1 3 46 performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is SOT-89-3L, which accords with the RoHS standard.

Features

z Fast Switching z Low ON Resistance(Rdson≤10.5Ω) z Low Gate Charge (Typical Data:6.0nC) z Low Reverse transfer capacitances(Typical:4pF) z 100% Single Pulse avalanche energy Test.

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Published: Jun 21, 2025 |