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HM06N15MR - 150V N-Channel Enhancement Mode MOSFET

General Description

The HM06N15MR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 150V,ID =0.6A RDS(ON) < 880mΩ @ VGS=10V (Typ:700mΩ) High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation.

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HM06N15MR 150V N-Channel Enhancement Mode MOSFET Description The HM06N15MR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =0.