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HM06N15MR - 150V N-Channel Enhancement Mode MOSFET

Product Overview

H&M Semiconductor

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HM06N15MR 150V N-Channel Enhancement Mode MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM06N15MR

Datasheet Details

Part number	HM06N15MR
Manufacturer	H&M Semiconductor
File Size	961.47 KB
Description	150V N-Channel Enhancement Mode MOSFET
Datasheet	HM06N15MR Datasheet
Additional preview pages of the HM06N15MR datasheet.

Product details

Description

The HM06N15MR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 150V,ID =0.6A RDS(ON) < 880mΩ @ VGS=10V (Typ:700mΩ) High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation.

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Published: Jun 30, 2025 |