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HM02P30PR - -300V P-Channel Enhancement Mode MOSFET

General Description

The HM02P30PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = -300V ID =-0.2 A RDS(ON) < 17mΩ @ VGS=10V.

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HM02P30PR -300V P-Channel Enhancement Mode MOSFET Description The HM02P30PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -300V ID =-0.