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HM120N04 - N-Channel Enhancement Mode Power MOSFET

Description

The HM120N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =40V,ID =120A RDS(ON).

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Datasheet preview – HM120N04

Datasheet Details

Part number HM120N04
Manufacturer H&M Semiconductor
File Size 577.07 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM120N04 Datasheet
Additional preview pages of the HM120N04 datasheet.

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Full PDF Text Transcription

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HM120N04 N-Channel Enhancement Mode Power MOSFET Description The HM120N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =40V,ID =120A RDS(ON) <4.0mΩ @ VGS=10V RDS(ON) <7mΩ @ VGS=4.
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