HM120N04K Overview
Description
The HM120N04K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Key Features
- VDS =40V,ID =120A RDS(ON) =4.2mΩ (Typ)@ VGS=10V RDS(ON) =6.5mΩ (Typ)@ VGS=4.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
