HM120N04K
HM120N04K is N-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
N-Channel Enhancement Mode Power MOSFET
Description
The HM120N04K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =40V,ID =120A RDS(ON) =4.2mΩ (Typ)@ VGS=10V RDS(ON) =6.5mΩ (Typ)@ VGS=4.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Schematic diagram
Application
- Load switching
- Hard switched and high frequency circuits
- Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED! 100% ∆Vds TESTED!
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
TO-252-2L
Reel Size
- Tape width
- Quantity
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