HM120N03KA Datasheet | H&M Semiconductor

N-Channel Enhancement Mode Power MOSFET Description The HM120N03KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =30V,ID =120A RDS(ON) =3.2mΩ (Typ) @ VGS=10V RDS(ON) =4.6mΩ (Typ) @ VGS=4.5V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability Schematic diagram HM120N03KA Application - Power switching application - Hard switched and high frequency circuits - Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package HM120N03KA HM120N03KA TO-252-2L Reel Size - Tape width - Quantity -...