HM120N03K Overview
Description
uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Key Features
- VDS =30V,ID =120A RDS(ON) <3.5mΩ @ VGS=10V (Typ:3.0mΩ) - High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability +01
