HM12N20D - N-Channel Enhancement Mode Power MOSFET

Description

The HM1' uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =200V,ID =A RDS(ON) < 80mΩ @ VGS=10V (Typ:63mΩ).
High density cell design for ultra low Rdson.
Fully characterized Avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

H&M Semiconductor

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Datasheet Details

Part number	HM12N20D
Manufacturer	H&M Semiconductor
File Size	380.47 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM12N20D Datasheet
Additional preview pages of the HM12N20D datasheet.

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Full PDF Text Transcription

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HM1' N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM1' uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

Published: Aug 12, 2025 |