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HM12N20D Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

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General Description

The HM1' uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

GENERAL

Overview

HM1' N-Channel Enhancement Mode Power MOSFET.

Key Features

  • VDS =200V,ID =A RDS(ON) < 80mΩ @ VGS=10V (Typ:63mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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