HM16P12D - P-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM16P12D
Manufacturer	H&M Semiconductor
File Size	506.49 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	HM16P12D Datasheet
Additional preview pages of the HM16P12D datasheet.

Product details

Description

The HM16P12D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications.

Features

VDS = -12V,ID = -16A RDS(ON) < 22mΩ @ VGS=-2.5V RDS(ON) < 18mΩ @ VGS=-4.5V.
Advanced trench MOSFET process technology.
Ultra low on-resistance with low gate charge.

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Published: Nov 27, 2018 |