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HM2301G - P-Channel Enhancement Mode Power MOSFET

General Description

The HM2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -20V,ID = -2A RDS(ON) < 10mΩ @ VGS=-2.5V RDS(ON) < 10mΩ @ VGS=-4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package D G S Schematic diagram  Marking and pin Assignment.

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Full PDF Text Transcription for HM2301G (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HM2301G. For precise diagrams, and layout, please refer to the original PDF.

HM* P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with ga...

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gy to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -20V,ID = -2A RDS(ON) < 10mΩ @ VGS=-2.5V RDS(ON) < 10mΩ @ VGS=-4.

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