Datasheet Details
| Part number | HM25SDN03Q |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 533.03 KB |
| Description | Dual Asymmetric N-Channel Enhancement Mode MOSFET |
| Datasheet | HM25SDN03Q-HMSemiconductor.pdf |
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Overview: HM25SDN03Q HM25SDN03Q Dual Asymmetric N-Channel Enhancement Mode MOSFET.
| Part number | HM25SDN03Q |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 533.03 KB |
| Description | Dual Asymmetric N-Channel Enhancement Mode MOSFET |
| Datasheet | HM25SDN03Q-HMSemiconductor.pdf |
|
|
|
This device uses advanced trench technology to provide excellent RDSON and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Applications Power Management in notebook computer Portable Equipment Battery Powered Systems Ordering Information Device Package Shipping HM25SDN03Q DFN3X3 5000/Reel Bottom View HM25SDN03Q YYWW Marking HM25SDN03Q Absolute Maximum Ratings(TA=25℃ unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain-to-Source Voltage 30 V VGSS Gate-to-Source Voltage ±20 V TC=25℃ 25 A ID Continuous Drain Current TC=100℃ 17 A IDM Pulsed Drain Current b 75 A Continuous Drain Current TA=25℃ 14 A IDSM a TA=70℃ 9 A TC=25℃ 25 W PD Power Dissipation c TC=100℃ 10 W TA=25℃ 2.5 W PDSM Power Dissipation a TA=70℃ 0.9 W IAS EAS TJ TSTG Avalanche Current Avalanche Energy, L=0.05mH Operation junction temperature Storage temperature range 25 A 16 mJ -55 to 150 ℃ -55 to 150 ℃ Thermal Resistance Ratings(TA=25℃ unless otherwise noted) Symbol RθJA RθJC Note: Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Case Thermal Resistance Typical Maximum 55 6 Unit ℃/W a.
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