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HM2P10PR - Power MOSFET

Key Features

  • RDS(Typ. ) < 250 mΩ@VGS = -10 V.
  • RDS(Typ. ) < 300 mΩ@VGS = -4.5V.
  • Gross Die = 9600.

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HM2P10PR Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES ◆ RDS(Typ.) < 250 mΩ@VGS = -10 V ◆ RDS(Typ.) < 300 mΩ@VGS = -4.5V ◆ Gross Die = 9600 APPLICATIONS ◆ Battery Charge ◆ Load Switching ◆ Power Converter   D G S Schematic diagram   SOT-89-3L top view   Absolute Maximum Ratings (TA=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TA =25°C Drain Current-Pulsed @ TA =25°C Note1 Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Resistance, Junction-to-Ambient Note2 Symbol VDS VGS ID IDM PD TSTG TJ RθJA  Ratings -100 ±20 -5 -15 2.