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HM2P15R - -150V P-Channel Enhancement Mode MOSFET

General Description

The HM2P15R uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = -150V ID =-2.0 A RDS(ON) < 780mΩ @ VGS=10V.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HM2P15R -150V P-Channel Enhancement Mode MOSFET Description The HM2P15R uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -150V ID =-2.