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HM2P10R - Power MOSFET

Key Features

  • RDS(Typ. ) < 250 mΩ@VGS = -10 V.
  • RDS(Typ. ) < 300 mΩ@VGS = -4.5V.
  • Gross Die = 9600.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HM2P10R Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES ◆ RDS(Typ.) < 250 mΩ@VGS = -10 V ◆ RDS(Typ.) < 300 mΩ@VGS = -4.5V ◆ Gross Die = 9600 APPLICATIONS ◆ Battery Charge ◆ Load Switching ◆ Power Converter  D  G S Schematic diagram    SOT-223 top view   Absolute Maximum Ratings (TA=25°C unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous @ TA =25°C Drain Current-Pulsed @ TA =25°C Note1 ID IDM Maximum Power Dissipation PD Storage Temperature Range TSTG Operating Junction Temperature Range Thermal Resistance, Junction-to-Ambient Note2 TJ RθJA  Ratings -100 ±20 -5 -15 2.